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BUJD105AD npn power transistor with integrated diode rev. 01 ? 8 may 2009 product data sheet 1. product profile 1.1 general description high voltage, high speed, planar passiva ted npn power switching transistor with integrated anti-parallel e-c diode in a sot428 (dpak) surface-mountable plastic package. 1.2 features and benefits ? fast switching ? high voltage capability ? very low switching and conduction losses 1.3 applications ? dc-to-dc converters ? electronic lighting ballasts ? inverters ? motor control systems 1.4 quick reference data table 1. quick reference symbol parameter conditions min typ max unit i c collector current - - 8 a p tot total power dissipation t mb 25 c; see figure 3 --80w v cesm collector-emitter peak voltage v be = 0 v - - 700 v static characteristics h fe dc current gain v ce =5v; i c =4a; t mb = 25 c; see figure 6 ; see figure 7 8 13.5 -
BUJD105AD_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 8 may 2009 2 of 12 nxp semiconductors BUJD105AD npn power transistor with integrated diode 2. pinning information [1] it is not possible to make a connecti on to pin 2 of the sot428 (dpak) package. 3. ordering information 4. limiting values table 2. pinning information pin symbol description simplified outline graphic symbol 1b base s o t 4 2 8 ( s c - 6 3 ; d pa k ) 2 c collector [1] 3 e emitter mb c mounting base; connected to collector 3 2 mb 1 sym13 1 c e b table 3. ordering information type number package name description version BUJD105AD sc-63; dpak plastic single-ended surface-mounted package (dpak); 3 leads (one lead cropped) sot428 table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v cesm collector-emitter peak voltage v be =0v - 700 v v cbo collector-base voltage i e =0a - 700 v v ceo collector-emitter voltage i b =0a - 400 v i c collector current - 8 a i cm peak collector current see figure 1 ; see figure 2 -16a i b base current -4a i bm peak base current - 8 a p tot total power dissipation t mb 25 c; see figure 3 -80w t stg storage temperature -65 150 c t j junction temperature - 150 c
BUJD105AD_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 8 may 2009 3 of 12 nxp semiconductors BUJD105AD npn power transistor with integrated diode fig 1. test circuit for reverse bias safe operating area fig 2. reverse bias safe operating area fig 3. normalized total power dissipation as a function of mounting base temperature 001aab999 dut l c l b i bon v bb v cc v cl(ce) probe point v ceclamp (v) 0 800 600 200 400 001aac049 4 6 2 8 10 i c (a) 0 v bb = ? 5 v ? 3 v ? 1 v t mb ( c) 0 160 120 40 80 001aab993 40 80 120 p der (%) 0
BUJD105AD_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 8 may 2009 4 of 12 nxp semiconductors BUJD105AD npn power transistor with integrated diode 5. thermal characteristics table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base see figure 4 - - 1.56 k/w r th(j-a) thermal resistance from junction to ambient printed-circuit-board mounted; minimum footprint; see figure 5 -75-k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse width fig 5. minimum footprint sot428 001aab998 t p (s) 10 ? 5 110 10 ? 1 10 ? 2 10 ? 4 10 ? 3 1 10 ? 1 10 z th(j-mb) (k/w) 10 ? 2 = 0.5 0.2 0.1 t p t p t p tot t t = 0.01 0.05 0.02 001aab021 7.0 7.0 4.57 2.5 2.15 1.5
BUJD105AD_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 8 may 2009 5 of 12 nxp semiconductors BUJD105AD npn power transistor with integrated diode 6. characteristics [1] measured with half sine-wave voltage (curve tracer). table 6. characteristics symbol parameter conditions min typ max unit static characteristics h fe dc current gain v ce =5v; i c =4a; t mb =25c; see figure 6 ; see figure 7 8 13.5 - v ce =5v; i c =1ma; t mb =25c 10 17 34 v ce =5v; i c = 500 ma; t mb =25c 13 23 36 i cbo collector-base cut-off current i e =0a; v cb = 700 v [1] --0.2ma i ceo collector-emitter cut-off current i b =0a; v ce = 400 v [1] --0.1ma i ces collector-emitter cut-off current v ce =700v; v be =0v; t j =25c [1] --0.2ma v ce =700v; v be =0v; t j =125c [1] --0.5ma i ebo emitter-base cut-off current i c =0a; v eb =9v --10ma v besat base-emitter saturation voltage i c =4a; i b = 0.8 a; see figure 8 -11.5v v ceosus collector-emitter sustaining voltage i b =0a; l c =25mh; i c =10ma; see figure 9 ; see figure 10 400 - - v v cesat collector-emitter saturation voltage i b = 0.8 a; i c = 4 a; see figure 11 ; see figure 12 -0.31v v f forward voltage i f = 4 a - 1.07 1.5 v dynamic characteristics t f fall time i c =5a; i bon =1a; v bb =-5v; l b =1h; inductive load; t mb = 25 c; see figure 13 ; see figure 14 -2050ns i c =5a; i bon =1a; v bb =-5v; l b =1h; inductive load; t mb =100c - 25 100 ns i c =5a; i bon =1a; i boff =-1a; r l =75 ? ; resistive load; t j = 25 c; see figure 15 ; see figure 16 -0.30.5s t on turn-on time i c =5a; i bon =1a; i boff =-1a; r l =75 ? ; t j = 25 c; resistive load -0.651s t s storage time i c =5a; i bon =1a; i boff =-1a; r l =75 ? ; resistive load; t j =25c -1.82.5s i c =5a; i bon =1a; r l =75 ? ; inductive load; t j =25c; l b =1h; v bb =-5v -1.21.7s i c =5a; i bon =1a; i boff = -1 a; inductive load; t j =100c; l b =1h; v bb =-5v -1.41.9s
BUJD105AD_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 8 may 2009 6 of 12 nxp semiconductors BUJD105AD npn power transistor with integrated diode fig 6. dc current gain as a function of collector current; typical values fig 7. dc current gain as a function of collector current; typical values fig 8. base-emitter saturation voltage as a function of collector current; typical values fig 9. test circuit for collector-emitter sustaining voltage 001aac045 i c (a) 10 ? 2 10 1 10 ? 1 10 10 2 h fe 1 t j = 100 c 25 c ? 40 c 001aac046 i c (a) 10 ? 2 10 1 10 ? 1 10 10 2 h fe 1 t j = 100 c 25 c ? 40 c i c (a) 10 ? 1 10 1 001aac047 0.9 0.7 1.1 1.3 v besat (v) 0.5 t j = ? 40 c 25 c 100 c 001aab987 horizontal 1 300 6 v vertical oscilloscope 50 v 100 to 200 30 hz to 60 hz
BUJD105AD_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 8 may 2009 7 of 12 nxp semiconductors BUJD105AD npn power transistor with integrated diode fig 10. oscilloscope display for collector-emitter sustaining voltage test waveform fig 11. collector-emitter saturation voltage as a function of base current; typical values fig 12. collector-emitter saturation voltage as a function of collector current; typical values fig 13. test circuit for inductive load switching 001aab988 v ce (v) min v ceosus i c (ma) 10 100 250 0 i b (a) 10 ? 2 10 1 10 ? 1 001aab995 0.8 1.2 0.4 1.6 2.0 v cesat (v) 0 i c = 1 a 2 a 3 a 4 a 001aac048 0.2 0.4 0.6 v cesat (v) 0 i c (a) 10 ? 1 10 1 t j = 100 c 25 c ? 40 c 001aab99 1 v cc l c dut l b i bon v bb
BUJD105AD_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 8 may 2009 8 of 12 nxp semiconductors BUJD105AD npn power transistor with integrated diode fig 14. switching times waveforms for inductive load fig 15. test circuit for resistive load switching fig 16. switching times waveforms for resistive load 001aab99 2 i c i b 90 % t off i bon t s t f t t ? i boff i con 10 % 001aab989 t p r b v im 0 r l dut v cc t 001aab99 0 i c i b 10 % 10 % 90 % 90 % t on t off t s t f t t i bon ? i boff i con t r 30 ns
BUJD105AD_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 8 may 2009 9 of 12 nxp semiconductors BUJD105AD npn power transistor with integrated diode 7. package outline fig 17. package outline sot428 (dpak) references outline version european projection issue date iec jedec jeita sot428 sc-63 to-252 sot42 8 06-02-14 06-03-16 dimensions (mm are the original dimensions) p lastic single-ended surface-mounted package (dpak); 3 leads (one lead cropped) a 2 13 e 1 d 2 d 1 h d l l 1 l 2 e 1 e mounting base wa m b e b 2 b 1 c a 1 y 0 5 10 mm scale unit mm 0.93 0.46 5.46 5.00 0.56 0.20 6.22 5.98 6.73 6.47 10.4 9.6 2.95 2.55 a 1 2.38 2.22 ab 2 1.1 0.9 b 1 e 1 0.89 0.71 bcd 1 0.9 0.5 l 2 ee 2.285 4.57 4.0 d 2 min 4.45 e 1 min 0.5 l 1 min h d lw 0.2 y max 0.2 a
BUJD105AD_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 8 may 2009 10 of 12 nxp semiconductors BUJD105AD npn power transistor with integrated diode 8. revision history table 7. revision history document id release date data sheet status change notice supersedes BUJD105AD_1 20090508 product data sheet - -
BUJD105AD_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 ? 8 may 2009 11 of 12 nxp semiconductors BUJD105AD npn power transistor with integrated diode 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in su ch equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as th e item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the object ive specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the pr oduct specification.
nxp semiconductors BUJD105AD npn power transistor with integrated diode ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 8 may 2009 document identifier: BUJD105AD_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 contact information. . . . . . . . . . . . . . . . . . . . . . 11

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